QuantumWell相关论文
We demonstrate GaSb-based interband cascade lasers[ICLs]emitting around 3.65 μm,which exhibit a room-temperature contin......
Electroluminescence and photovoltaic effect in n-GaSb/InAs/p-GaSb heterostructure grown by MOVPE wit
InAs/GaSb quantum well(QW)structures attract a great attention due to their unique type Ⅱ broken-gap alignment [1].Such......
Biosensors based on ion-sensitive field-effect transistor (ISFET) have demonstrated a lot of advantages such as small si......
Improved electrical properties in AlGaN/GaN heterostructures using AIN/GaN/AIN quantum well as chann
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Topological insulators(TIs),a new state of quantum matter,have recently attracted significant attention,both for their f......
Excitonic characteristics of wurtzite InGaN staggered quantum wells for light-emitting diode applica
Recently,Ⅲ-nitride materials systems have attracted much attention as the active region for light emitting diodes(LEDs)......
Green-Yellow Emission Efficiency and Droop Improvement in Modified Triangular InGaN/GaN Quantum Well
A modified triangular quantum well(QW)structure composed of high indium content InGaN wetting layers,graded InGaN layers......
采用龙格-库塔算法对激光与半导体双量子阱系统相互作用的密度矩阵方程进行数值求解，研究了不对称半导体双量子阱系统中电子布居转......
InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor bro
We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications i......
基于InGaSb/AlGaAsSb材料体系, 制备出了一款高性能的镀膜激光器。为了性能对比, 同时制备了未镀膜激光器。未镀膜的器件在注入电......
采用532nm锁模脉冲激光和时间分辨测量系统测量了InGaAs/GaAa单量子阱在77K时,不同激发功率下的时间分辨光致发光谱.结果表明,在低......
假设量子阱是类W势阱，应变效应表现为势阱底部出现了类抛物线鼓包。在量子力学框架下，讨论了应变效应对输出波长的影响。结果表明，......
在经典力学框架内和小振幅近似下，引入正弦平方势，把粒子的运动方程化为广义Duffing方程。在二次非线性情况下，把Duffing方程化为外尔......
用量子阱技术生长的半导体材料作激光增益介质,AlGaAs/GaAs对做布喇格反射镜,并以简单的平凹腔做谐振腔,半导体激光器作泵浦源,制......
利用分子束外延技术研制出了高质量InGsAs/GaAs应变量子阱材料及量子阱激光器.脊形波导窄条形量子阱激光器的阈值电流和微分量子效......
为实现垂直腔面发射半导体激光器（VCSEL）在808 nm波长的激射，对VCSEL芯片的整体结构进行了设计。基于应变量子阱的能带理论、固体模型......
对第三代太阳电池的InGaP/GaAs双叠层模型结构进行了理论性改进，提出了将GaInNAs/GaAs量子阱结构生长于子电池GaAs的空间电荷区的模......
HgTe/CdTe量子阱是研究拓扑绝缘体新奇物性的一个很好载体。采用Kane八带k·p模型, 对电场驱动Hg1-xCdxTe/CdTe量子阱拓扑相变及其......
对比分析了量子阱材料增益谱及其折射率变化谱随阱宽、应变和载流子浓度的变化特性,在此基础上以两谱线3dB谱宽交叠区面积为度量,......
研究了快速热退火(RTA) 对GaAs/AlGaAs量子阱材料结构及发光特性的影响。结果表明,当退火温度为800 ℃时,材料晶体质量和光致发光(......
采用调 Q YAG 激光器研究了半导体材料 GaAs,GaAs:Cr,InGaAs/GaAs 单量子阱(SQW)的倍频效应及其规律。测量了信号大小与晶体对称轴......
分析了影响列阵半导体激光器输出功率的因素。利用分束延生长法生长出ＧａＡｌＡｓ／ＧａＡｓ梯度折射率分别限制单量子阱材料（ＧＲＩＮ－ＳＣＨ－ＳＱＷ）。利用该材料制作出的列阵半......
实现了InGaAs/InGaAlAs应变补偿量子阱激光器的室温脉冲激射,激射波长为156μm,阈值电流密度小于185kA/cm2,脊波导结构的激光器最......
本文从理论上对混合应变量子结构（既有张应变量子阱又有压应变量子阱）的光学限制因子进行了讨论。由于垒层宽度较小，其变化量也不大，对......
